rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks , and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 9 r f 5601 4.9ghz to 5.85ghz low noise amplifier with bypass the rf5601 is a high performance low noise amplifier design ed for 802.11a /n/ac applications and other portable consumer electronics. the small form factor and high level of integration (input and output match, internal dc blocking capacitors ) reduces the number of external components keeping cost down and minimizing layout area for implementation. the rf5601 is featured in a 2.2mm x 2.2mm x 0.5 mm 8 - pin qfn package . 2 lna _ en 1 rf in 3 byp _ en 4 n / c 5 rf out 6 n / c 8 n / c 7 vdd functional block diagram ordering information rf 5601 standard 25 piece bag rf 5601 sr standard 100 piece reel rf 5601tr7 standard 2500 piece reel rf 5601 pck - 410 fully populated evaluation board w/ 5 piece bag package: qfn, 8 - pin, 2.2mm x 2.2 mm x 0.5mm features single supply voltage 2.3v to 4.8v 1.8 db noise figure 12 db typical gain 5db il in bypass mode applications 802.11a /n/ac wifi applications consumer electronics mobile devices gaming general purpose 5ghz lna rf5601
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 2 of 9 rf 5601 absolute maximum rat ings parameter rating unit dc supply voltage 5.5 v rf input power +5* dbm operating ambient temperature - 40 to +85 c storage temperature - 40 to +150 c moisture sensitivity msl2 *note: maximum input power with a 50 ? load in high gain mode. caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device m ay reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max typical conditions temp = 25c, v dd = 3.3v, lna_en = 3.3 v, b yp _en = 3.3 v in high gain mode, byp _en = 0 v in bypass mode, frequency = 4.9 ghz to 5.85 ghz unless otherwise noted frequency 4.9 5.85 ghz dc voltage supply (v dd ) 2.3 3.3 4.8 v lna_en low 0.2 v lna off. see logic table for additional control settings. lna_en high 2.3 3.3 vdd v lna on. byp_en control must be high simultaneously for high gain mode. see control table. byp_en low 0.2 v bypass mode on . see logic table for more details. byp_en high 1.8 3.3 vdd v bypass mode off . see logic table for more details. lna current lna i dd 12 17 a lna in ?on? state, over full dc supply range, lna_en supply range and over normal operating temperature range ( - 20c to 75c) 3 5 a lna in ?off? state, v dd = 0v; lna_en = 0 v, byp _en = 0 v lna enable 2 10 a v dd = 2.3 v to 4.8v, lna_en = 2.3v to 4.8 v, over full frequency range, and over normal operating temperatures - 20c to +75c high gain mode gain 9 12 15 db o ver full v dd and lna_en ranges, over frequency and over full temperature range from - 40c to +85c noise figure hi gain mode 1.8 2.6 db o ver full v dd , lna_en, and byp _en voltages, over frequency and normal operating temperatures ( - 20c to +75c) bypass mode insertion loss 5.0 7.0 db passband ripple - 1.0 +1.0 db lna is in high gain mode, over full frequency range, over full v dd and lna_en voltage range input ip3 +9 dbm high gain mode rf port return loss 9.6 15.0 db input and output. no external matching .
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 3 of 9 rf 5601 parameter specification unit condition min typ max typical conditions (continued) temp = 25c, vdd = 3.3 v, lna_en = 3.3v, byp _en = 3.3v in high gain mode, byp _en = 0 v in bypass mode, frequency = 4.9 ghz to 5.85 ghz unless otherwise noted rf port impedance 50 ? input and output. no external matching lna turn on/off time 100 160 nsec esd human body model 500 v eia/jesd22 - 114a rf pins 500 v eia/jesd22 - 114a dc pins charge device model 350 v jesd22 - c101c all pins control logic table mode controls vdd lna_en byp_en high gain high high high bypass mode high low low undefined* high high low high in/out isolation high low high *this state is not recommended
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 4 of 9 rf 5601 plots
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 5 of 9 rf 5601 evaluation board schematic gnd rf out j 2 3 4 5 6 7 8 1 2 rf in j 1 vdd c1 dnp p1 1 2 3 4 lna_en byp_en evaluation board layout
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 6 of 9 rf 5601 application schematic ? 4.9ghz to 5.85ghz 1 2 8 7 5 6 4 3 n / c j 1 rfin 50 ? strip lna en byp _ en n / c vdd c 1 1 uf j 3 ant 50 ? strip note : we evaluated this device with and without c 1 but seen no performance difference . depending on the layout and the nature of the supply voltage c 1 could be used and stuffed with 1 uf
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 7 of 9 rf 5601 pin out 2 lna_en 1 rf in 3 byp_en 4 n/c 5 rf out 6 n/c 8 n/c 7 vdd package drawing
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 8 of 9 rf 5601 pin names and descriptions pin name description 1 rf in rf input. input is matched to 50 ? and dc block is provided internally. 2 lna_en lna enable. please see truth table for operation. 3 byp _en bypass enable. please see truth table for operation. 4 nc no connect. 5 rf out rf o utput. output is matched to 50 ? and dc - block is provided internally. 6 nc no connect. 7 vdd supply voltage for the lna circuit. 8 nc no connect pkg base the center metal base of the qfn package provides dc and rf ground as well as heat sink for the amplifier.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds13 1029 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of pat ents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specific ations at any time without prior notice. 9 of 9 rf 5601 tape and reel carrier tape basic dimensions are based on eia 481. the pocket is designed to hold the part for shipping and loading onto smt manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. the i ndividual pocket design can vary from vendor to vendor, but width and pitch will be consistent. carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. the center hub design is large enou gh to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. prior to shipping, moisture sensitive parts (msl level 2a - 5a) are baked and placed into the pockets of the carrier tape. a cover tape is sealed over the top of the entire length of the carrier tape. the reel is sealed in a moisture barrier esd bag with the appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. it is important to note that unused moist ure sensitive parts need to be resealed in the moisture barrier bag. if the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125c. if baking is required, devices m ay be baked accordi ng to section 4, table 4 - 1, of joint industry standard ipc/jedec j - std - 033. the table below provides useful information for carrier tape and reels used for shipping the devices described in this docume nt. rfmd part number reel diameter inch (mm) hub diamet er inch (mm) width (mm) pocket pitch (mm) feed units per reel RF5601TR7 7 (178) 2.4 (61) 12 4 single 2500
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